| 000 | 00598cam a2200181 4500 | ||
|---|---|---|---|
| 001 | i047184893X | ||
| 020 | _a047184893X | ||
| 035 | _a(Sirsi) i9780471848936 | ||
| 050 | _aTK7871.85 | ||
| 100 | _aDressendorfer, P.V. (Sandia National Laboratories, Alberquerque, New Mexico, USA) | ||
| 245 | _aIonizing Radiation Effects in MOS Devices and Circuits | ||
| 260 |
_aNew York _bJohn Wiley and Sons Ltd _c1989 |
||
| 300 |
_a592 p. _ehardback. |
||
| 500 | _aBookData Record | ||
| 650 | _aMetal oxide semiconductors - Effect of radiation on. | ||
| 700 | _aMa, T.-P. (Yale University, USA) | ||
| 596 | _a1 | ||
| 999 |
_c43711 _d43711 |
||