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Ionizing Radiation Effects in MOS Devices and Circuits

By: Dressendorfer, P.V. (Sandia National Laboratories, Alberquerque, New Mexico, USA)Contributor(s): Ma, T.-P. (Yale University, USA)Material type: TextTextReference number:i047184893XPublication details: New York John Wiley and Sons Ltd 1989 Description: 592 p. hardbackISBN: 047184893XSubject(s): Metal oxide semiconductors - Effect of radiation onLOC classification: TK7871.85
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Item type Current library Class number Copy number Status Date due Barcode Item reservations
Standard Standard Main Library General Shelves TK7871.85 (Browse shelf(Opens below)) 1 Available 302556-1001
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